Structural, dielectric, and piezoelectric properties of Ce-doped Bi7Ti4.2Ta0.3W0.5O21 intergrowth ferroelectric ceramics

被引：5

作者：

Zeng, Renfen ^{[1
]}

Ye, Fen ^{[1
]}

Jiang, Xiangping ^{[1
]}

Chen, Chao ^{[1
]}

Huang, Xiaokun ^{[1
]}

Nie, Xin ^{[1
]}

机构：

[1] Jingdezhen Ceram Univ, Dept Mat Sci & Engn, Jiangxi Key Lab Adv Ceram Mat, Jingdezhen 333001, Jiangxi, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2022年 / 48卷 / 14期

基金：

中国国家自然科学基金;

关键词：

Bi7-xCexTi4.2Ta0.3W0.5O21; Dielectric property; Piezoelectric property; Oxygen vacancy; ELECTRICAL-PROPERTIES; THERMAL-STABILITY; BISMUTH TITANATE; PHASE-TRANSITION; SPECTROSCOPY; BI4TI3O12; MICROSTRUCTURE; CONDUCTIVITY; IMPEDANCE;

D O I：

10.1016/j.ceramint.2022.02.195

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The Bi7-xCexTi4.2Ta0.3W0.5O21 (BTTW-BITT-xCe, x = 0.05, 0.10, 0.15, 0.20) ceramics were studied as potential materials for high-temperature applications. The microstructure, dielectric, piezoelectric and ferroelectric properties of Ce doped BTTW-BITT samples were analyzed in detail. The results indicated that an appropriate amount of Ce ion doping could inhibit the growth of grains, suppress the relaxation peak, reduce high-temperature dielectric losses, and greatly improve the piezoelectric activities. The optimal ceramics was obtained at x = 0.15, which possessed a maximum piezoelectric constant of d(33) = 23.4 pC/N, a high Curie temperature of 713 degrees C, a loss value of 6% at 500 degrees C, and a favorable thermal stability of d(33) = 21.1 pC/N (90% of the initial value) at 500 degrees C. This result indicates that BTTW-BITT-0.15Ce has great potential for applications in the high temperature fields. In addition, XPS results showed that there were two Ce valences states, Ce3+ and Ce4+ present in the BTTW-BITT-xCe ceramics.

引用

页码：19567 / 19575

页数：9

共 47 条

[1] Enhanced piezoelectric properties and thermal stability in Mo/Cr co-doped CaBi2Nb2O9 high-temperature piezoelectric ceramics [J].