Enhanced power cycling performance of IGBT modules with a reinforced emitter contact

被引：27

作者：

Oezkol, Emre ^{[1
]}

Brem, Franziska ^{[2
]}

Liu, Chunlei ^{[1
]}

Hartmann, Samuel ^{[1
]}

Kopta, Arnost ^{[1
]}

机构：

[1] ABB Semicond, Lenzburg, Switzerland

[2] ABB Corp Res, Baden, Switzerland

来源：

MICROELECTRONICS RELIABILITY | 2015年 / 55卷 / 06期

关键词：

Power cycling; IGBT; Reliability; Emitter contact; FEM; DESIGN;

D O I：

10.1016/j.microrel.2015.03.013

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A typical emitter contact of an IGBT consists of a front metallization and bond wires. In this study, the power cycling performance of a special emitter contact design is experimentally verified. The emitter contact includes a metal plate, which is Ag-sintered to the metallization and wire bonded on the top surface. Either Cu or Al bond wires were implemented. Power cycling tests were performed to investigate the performance of such IGBT modules. The results were very promising and a cycling lifetime was achieved, which is about 20 times higher than the lifetime of typical IGBT modules. For a better understanding of the experimental results, the electrical and thermal response of the IGBT modules were simulated by FEM. The results of this study, provide a key for high-reliability designs of the emitter contact of IGBT modules with superior power cycling capability. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：912 / 918

页数：7

共 22 条

[1] Study of thermal cycling and temperature aging on PbSnAg die attach solder joints for high power modules
Dugal, F.
Ciappa, M.
[J]. MICROELECTRONICS RELIABILITY, 2014, 54 (9-10) : 1856 - 1861
[2] Fujii Y., 2012, P 24 INT S POW SEM D, P279
[3] Geissler U, 2013, PCIM EUR 2013 NUR GE
[4] Guth K, 2010, PCIM EUR 2010 NUR GE
[5] Hartmann S, 2010, CIPS 2010 NUR GERM
[6] Hartmann S., 2012, PCIM EUR 2012 NUR GE
[7] Reliability design of current stress in LSI interconnects using the estimation of failure rate due to electromigration
Hiraoka, K
Nikaido, T
[J]. MICROELECTRONICS RELIABILITY, 1997, 37 (08) : 1185 - 1191
[8] Hori M, 2014, PCIM EUR 2014 NUR GE
[9] Ikeda Y, 2010, P 22 INT S POW SEM D
[10] Design concept for wire-bonding reliability improvement by optimizing position in power devices
Ishiko, M
Usui, M
Ohuchi, T
Shirai, M
[J]. MICROELECTRONICS JOURNAL, 2006, 37 (03) : 262 - 268

← 1 2 3 →