Size-dependent photoconductivity in MBE-grown GaN-nanowires

被引：529

作者：

Calarco, R ^{[1
]}

Marso, M ^{[1
]}

Richter, T ^{[1
]}

Aykanat, AI ^{[1
]}

Meijers, R ^{[1
]}

Hart, AV ^{[1
]}

Stoica, T ^{[1
]}

Luth, H ^{[1
]}

机构：

[1] Res Ctr Julich, Inst Thin Films & Interfaces & Cni, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

来源：

NANO LETTERS | 2005年 / 5卷 / 05期

关键词：

D O I：

10.1021/nl0500306

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers; grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.

引用

页码：981 / 984

页数：4

共 22 条

[1] Nanowire resonant tunneling diodes
Björk, MT
Ohlsson, BJ
Thelander, C
Persson, AI
Deppert, K
Wallenberg, LR
Samuelson, L
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (23) : 4458 - 4460
[2] One-dimensional heterostructures in semiconductor nanowhiskers
Björk, MT
Ohlsson, BJ
Sass, T
Persson, AI
Thelander, C
Magnusson, MH
Deppert, K
Wallenberg, LR
Samuelson, L
[J]. APPLIED PHYSICS LETTERS, 2002, 80 (06) : 1058 - 1060
[3] CALARCO R, 2004, P ASDAM 04 C SMOL SL, P9
[4] Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy
Calleja, E
Sánchez-García, MA
Sánchez, FJ
Calle, F
Naranjo, FB
Muñoz, E
Jahn, U
Ploog, K
[J]. PHYSICAL REVIEW B, 2000, 62 (24) : 16826 - 16834
[5] Single-nanowire electrically driven lasers
Duan, XF
Huang, Y
Agarwal, R
Lieber, CM
[J]. NATURE, 2003, 421 (6920) : 241 - 245
[6] Growth and transport properties of complementary germanium nanowire field-effect transistors
Greytak, AB
Lauhon, LJ
Gudiksen, MS
Lieber, CM
[J]. APPLIED PHYSICS LETTERS, 2004, 84 (21) : 4176 - 4178
[7] Growth of nanowire superlattice structures for nanoscale photonics and electronics
Gudiksen, MS
Lauhon, LJ
Wang, J
Smith, DC
Lieber, CM
[J]. NATURE, 2002, 415 (6872) : 617 - 620
[8] Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination
Han, S
Jin, W
Zhang, DH
Tang, T
Li, C
Liu, XL
Liu, ZQ
Lei, B
Zhou, CW
[J]. CHEMICAL PHYSICS LETTERS, 2004, 389 (1-3) : 176 - 180
[9] GAAS FREESTANDING QUANTUM-SIZE WIRES
HIRUMA, K
YAZAWA, M
HARAGUCHI, K
OGAWA, K
KATSUYAMA, T
KOGUCHI, M
KAKIBAYASHI, H
[J]. JOURNAL OF APPLIED PHYSICS, 1993, 74 (05) : 3162 - 3171
[10] Kocan M, 2002, PHYS STATUS SOLIDI B, V234, P773, DOI 10.1002/1521-3951(200212)234:3<773::AID-PSSB773>3.0.CO

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