Size-dependent photoconductivity in MBE-grown GaN-nanowires

被引：531

作者：

Calarco, R ^{[1
]}

Marso, M ^{[1
]}

Richter, T ^{[1
]}

Aykanat, AI ^{[1
]}

Meijers, R ^{[1
]}

Hart, AV ^{[1
]}

Stoica, T ^{[1
]}

Luth, H ^{[1
]}

机构：

[1] Res Ctr Julich, Inst Thin Films & Interfaces & Cni, Ctr Nanoelect Syst Informat Technol, D-52425 Julich, Germany

来源：

NANO LETTERS | 2005年 / 5卷 / 05期

关键词：

D O I：

10.1021/nl0500306

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We report on electrical transport in the dark and under ultraviolet (UV) illumination through GaN nanowhiskers; grown by molecular beam epitaxy (MBE), which is sensitively dependent on the column diameter. This new effect is quantitatively described by a size dependent surface recombination mechanism. The essential ingredient for the interpretation of this effect is a diameter dependent recombination barrier, which arises from the interplay between column diameter and space charge layer extension at the column surface.

引用

收藏

页码：981 / 984

页数：4

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