Characterization of ZnO:Al films, deposited on organic substrate by r.f. magnetron sputtering

被引：0
|
作者：
Ma, J [1 ]
Hao, XT
Zhang, SY
Ma, HL
机构：
[1] Shandong Univ, Sch Phys & Microelect, Inst Optoelect Mat & Devices, Jinan 250100, Peoples R China
[2] Chang An Univ, Inst Sci, Xian 710064, Peoples R China
来源：
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY | 2003年 / 19卷 / 04期
关键词：
zinc oxide; microstructure; electrical and optical properties;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Transparent conducting Al-doped zinc oxide (ZnO:Al) films with good adhesion have been deposited on polyimide thin film substrates by r.f. magnetron sputtering technique at low substrate temperature (25similar to180degreesC). The structural, optical and electrical properties of the deposited films were investigated.. High quality films with electrical resistivity as low as 8.5X10(-4) Omega.cm and the average transmittance over 74% in the wavelength range of the visible spectrum have been obtained. The electron carrier concentrations are in the range from 2.9x10(20) to 7.1x10(20) cm(-3) with mobilities from 4 to 8.8 cm(2) V(-1)s(-1). The densities of the films are in the range from 4.58 to 5.16 g/cm(-3).
引用
收藏
页码：363 / 365
页数：3
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