Photoluminescence and surface photovoltage spectroscopy characterization of highly strained In GaAs/GaAs quantum well structures grown by metal organic vapor phase epitaxy

被引：8

作者：

Chan, C. H. ^{[2
]}

Wu, J. D. ^{[1
]}

Huang, Y. S. ^{[1
]}

Hsu, H. P. ^{[3
]}

Tiong, K. K. ^{[4
]}

Sue, Y. K. ^{[5
]}

机构：

[1] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 106, Taiwan

[2] St Johns Univ, Dept Informat Management, Taipei 251, Taiwan

[3] Ming Chi Univ Technol, Dept Elect Engn, Taipei 243, Taiwan

[4] Natl Taiwan Ocean Univ, Dept Elect Engn, Chilung 202, Taiwan

[5] Natl Cheng Kung Univ, Dept Elect Engn, Tainan 701, Taiwan

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2010年 / 124卷 / 2-3期

关键词：

Semiconductors; Photoluminescence spectroscopy; Surface photovoltage spectroscopy; Optical properties; THRESHOLD CURRENT-DENSITY; MU-M; MODULATION SPECTROSCOPY; UNIAXIAL-STRESS; LASERS; DEPENDENCE; STATES; DOTS;

D O I：

10.1016/j.matchemphys.2010.08.046

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Photoluminescence (PL) and surface photovoltage spectroscopy (SPS) are used to characterize a series of highly strained InxGa1-xAs/GaAs quantum well (QW) structures grown by metal organic vapor phase epitaxy with different indium compositions (0 395 <= x <= 0 44) in the temperature range of 20K <= T <= 300 K The PL features show redshift in peak positions and broadened lineshape with increasing indium composition The S-shaped temperature dependent PL spectra have been attributed to carrier localization effect resulting from the presence of indium clusters at QW Interfaces A lineshape fit of features in the differential surface photovoltage (SPv) spectra has been used to determine the transition energies accurately At temperature below 100 K the light-hole (LH) related feature shows a significant phase difference as compared to that of heavy-hole (HH) related features The phase change of the LH feature can be explained by the existence of type-II configuration for the LH valence band and the process of separation of carriers within the QWs together with possible capture by the interface defect traps A detailed analysis of the observed phenomena enables the identification of spectral features and to evaluate the band lineup of the QWs The results demonstrate the usefulness of PL and SPS for the contactless and nondestructive characterization of highly strained InGaAs/GaAs QW structures (C) 2010 Elsevier B V All rights reserved

引用

页码：1126 / 1133

页数：8

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