Spatially controlled atomic layer deposition in porous materials

被引:43
作者
Elam, J. W. [1 ]
Libera, J. A. [1 ]
Pellin, M. J. [1 ]
Stair, P. C. [1 ,2 ]
机构
[1] Argonne Natl Lab, Argonne, IL 60439 USA
[2] Northwestern Univ, Ctr Chem & Surface Sci, Dept Chem, Evanston, IL 60208 USA
关键词
D O I
10.1063/1.2822897
中图分类号
O59 [应用物理学];
学科分类号
摘要
We describe a technique for depositing materials at controlled depths within porous substrates based upon the passivating effect produced by one precursor to prevent the adsorption of a second precursor. For example, a surface exposed to trimethyl aluminum is not reactive toward diethyl zinc. This effect, combined with Knudsen diffusion in which the precursor exposure times dictate the depth of penetration of the deposited layer, enables spatially controlled "stripe coating" within porous supports. We demonstrate ZnO stripes in anodic alumina and model the results using Monte Carlo simulations. Etching is identified as a potential problem for certain precursor combinations. (C) 2007 American Institute of Physics.
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页数:3
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