Tight binding calculation of electronic properties of ternary alloy ZnSxSe1-x

被引：10

作者：

Benkabou, K ^{[1
]}

Aoumeur, FZ ^{[1
]}

Abid, H ^{[1
]}

Amrane, N ^{[1
]}

机构：

[1] Univ Sidi Bel Abbes, Lab Appl Mat, Sidi Bel Abbes 22000, Algeria

来源：

PHYSICA B-CONDENSED MATTER | 2003年 / 337卷 / 1-4期

关键词：

semiconductor alloys; tight binding; band structure;

D O I：

10.1016/S0921-4526(03)00397-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Using an sp(3)s* empirical tight binding method, we calculate energy band gap and electronic band structure of the zinc-blende ternary alloy ZnSxSe1-x. The band gap composition is calculated using an extended version of the virtual crystal approximation, which introduce an empirical correction factor that takes into account the non-linear dependence of the band gap with the composition. The results compare well with the experimental data. The ionicity character and the refractive index are also calculated. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：147 / 153

页数：7

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