A high-power low-distortion GaAsHBT power amplifier for mobile terminals used in broadband wireless applications

被引：22
作者：
Oka, Tohru [1 ]
Hasegawa, Masatomo
Hirata, Michitoshi
Amano, Yoshihisa
Ishimaru, Yoshiteru
Kawamura, Hiroshi
Sakuno, Keiichi
机构：
[1] Sharp Co Ltd, Adv Technol Res Labs, Nara 6328567, Japan
[2] Sharp Co Ltd, Solar Syst Grp, Nara 6392198, Japan
[3] Sharp Co Ltd, Elect Components Grp, Nara 6328567, Japan
[4] Sharp Co Ltd, Elect Components Grp, Abeno Ku, Osaka 5458522, Japan
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2007年 / 42卷 / 10期
关键词：
broadband wireless application; harmonics; heterojunction bipolar transistor (HBT); linear; power amplifier; trap circuit;
D O I：
10.1109/JSSC.2007.904154
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes technologies of miniaturized high-power low-distortion GaAs HBT power amplifiers with a low-voltage operation for mobile terminals used in 5-6 GHz broadband wireless applications. In conjunction with diode-based linearizing techniques, wideband matching network techniques including trap circuits for second harmonics allow us to obtain a compact broadband power amplifier module with harmonic filtering, achieving the high linear output power at a low supply voltage together with the low distortion and the low second-harmonic spurious outputs in a wide frequency range. The fabricated power amplifier exhibited linear output power levels of 21 and 22 dBm at EVM values of 2.0 and 3.0%, respectively, measured with 54 Mb/s 64-QAM-OFDM signals at a supply voltage of 3.3 V in a frequency range of 5-6 GHz. Second harmonic spurious outputs below -35 dBc were also attained.
引用
收藏
页码：2123 / 2129
页数：7
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