Analysis and Design of Millimeter-Wave Power Amplifier Using Stacked-FET Structure

被引：61

作者：

Kim, Youngmin ^{[1
,2
]}

Kwon, Youngwoo ^{[1
,2
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 151742, South Korea

[2] Seoul Natl Univ, Inst New Media & Commun, Seoul 151742, South Korea

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2015年 / 63卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

Millimeter-wave integrated circuits; power amplifier; series-connected FET; stacked-FET; BAND; GHZ;

D O I：

10.1109/TMTT.2014.2387846

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new analysis methodology for millimeter-wave stacked-FET power amplifier design is proposed with a focus on the output power improvement by adjusting the complex load-admittance of each stacked-transistor. From this analysis, it is shown that there exist fundamental limitations on the maximum FET-stacking number and the operation frequency with given FET characteristics. Moreover, comprehensive analysis is performed to understand the effect of each FET parameter in limiting the number of stacks and output power. Based on this, a simple design method of C-gs compensation is proposed to further increase the number of the stacks and enhance the output power. To verify analyses, various high-frequency stacked-FET PA MMICs are designed and fabricated at different frequencies with pHEMTs, mHEMTs, and CMOSFETs, which all have different maximum transition frequencies(f(T)'s). This paper presents comprehensive analysis to identify the limitation of the stacked-FET amplifiers at millimeter-wave frequencies and presents a new design methodology to further improve the output power performance at high frequencies.

引用

页码：691 / 702

页数：12

共 21 条

[1]

Agah A., 2012, 2012 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), P57, DOI 10.1109/RFIC.2012.6242231

[2] Multi-Drive Stacked-FET Power Amplifiers at 90 GHz in 45 nm SOI CMOS [J].

Agah, Amir ;

Jayamon, Jefy Alex ;

Asbeck, Peter M. ;

Larson, Lawrence E. ;

Buckwalter, James F. .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 49 (05) :1148-1157

[3]

[Anonymous], 2011, SYMPOSIUM, P1, DOI [10.1109/NAPS.2011.6024892, DOI 10.1109/NAPS.2011.6024892]

[4]

Chakrabarti Anandaroop., 2012, Proceedings of the IEEE 2012 Custom Integrated Circuits Conference, P1

[5] Scalable Small-Signal Modeling of RF CMOS FET Based on 3-D EM-Based Extraction of Parasitic Effects and Its Application to Millimeter-Wave Amplifier Design [J].

Choi, Wooyeol ;

Jung, Gwangrok ;

Kim, Jihoon ;

Kwon, Youngwoo .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2009, 57 (12) :3345-3353

[6] Analysis and Design of Stacked-FET Millimeter-Wave Power Amplifiers [J].

Dabag, Hayg-Taniel ;

Hanafi, Bassel ;

Golcuk, Fatih ;

Agah, Amir ;

Buckwalter, James F. ;

Asbeck, Peter M. .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2013, 61 (04) :1543-1556

[7]

Ezzeddine A.K., 2011, PROC IEEE MTT S INT, P1, DOI DOI 10.1109/MWSYM.2011.5973295

[8] Ultra-broadband GaAsHIFET MMIC PA [J].

Ezzeddine, Amin K. ;

Huang, Ho C. .

2006 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-5, 2006, :1320-+

[9]

Fathi M, 2010, P IEEE CUST INT CIRC, P1

[10] Two-Way Current-Combining W-Band Power Amplifier in 65-nm CMOS [J].

Gu, Qun Jane ;

Xu, Zhiwei ;

Chang, Mau-Chung Frank .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2012, 60 (05) :1365-1374

← 1 2 3 →