A 40-GHz Colliding Pulse Mode-Locked Semiconductor Laser

被引：4

作者：

Liu, Song-Tao ^{[1
]}

Zhang, Rui-Kang

Lu, Dan

Kan, Qiang

Wang, Wei

Ji, Chen

机构：

[1] Chinese Acad Sci, Key Lab Semicond Mat Sci, Inst Semicond, Beijing 100083, Peoples R China

来源：

CHINESE PHYSICS LETTERS | 2016年 / 33卷 / 06期

基金：

中国国家自然科学基金;

关键词：

MU-M; GENERATION; NOISE;

D O I：

10.1088/0256-307X/33/6/064205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

A monolithically active-passive integrated colliding pulse mode-locked semiconductor laser is demonstrated in the InGaAsP/InP material system. The device is mode locked at the second harmonic passive mode-locking regime with a wide mode-locking range. Pulse trains with the repetition rate of 40 GHz, 3-dB rf line width of 25 kHz, the pulse width of 2.5 ps, and a nearly transform-limited time-bandwidth product of 0.53 are obtained.

引用

页数：4

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