High-Quality Sequential-Vapor-Deposited Cs2AgBiBr6 Thin Films for Lead-Free Perovskite Solar Cells

被引:109
|
作者
Wang, Ming [1 ,2 ]
Zeng, Peng [1 ,2 ]
Bai, Sai [3 ]
Gu, Jinwen [1 ,2 ]
Li, Faming [1 ,2 ]
Yang, Zhou [4 ]
Liu, Mingzhen [1 ,2 ]
机构
[1] Univ Elect Sci & Technol China, Ctr Appl Chem, Chengdu 611731, Sichuan, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu 611731, Sichuan, Peoples R China
[3] Linkoping Univ, Dept Phys Chem & Biol IFM, SE-58183 Linkoping, Sweden
[4] Shaanxi Normal Univ, Sch Mat Sci & Engn, Xian 710119, Shaanxi, Peoples R China
来源
SOLAR RRL | 2018年 / 2卷 / 12期
基金
国家重点研发计划; 中国国家自然科学基金;
关键词
diffusion length; double perovskite; high-quality film; lead-free perovskite solar cell; sequential vapor deposition; HALIDE DOUBLE PEROVSKITE; LIGHT; TRANSPORT; LENGTHS;
D O I
10.1002/solr.201800217
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Lead-free double perovskites have been demonstrated as promising alternatives to solve the toxicity and stability issues in conventional lead trihalide perovskites. However, different solubility of components in the precursors hinders fabrication of double perovskite films with commonly used solution procedures. Here, for the first time, the authors successfully prepared double perovskite Cs2AgBiBr6 thin films throughout a sequential-vapor-deposition procedure. The obtained thin films with pure double perovskite phase show large grain sizes, uniform, and smooth surface properties. In addition, the high-quality vapor-deposited Cs2AgBiBr6 films exhibit a photoluminescence (PL) lifetime of 117 ns, indicative of significant potential in photovoltaic applications. The resulting solar cells with planar device structure show an optimized power conversion efficiency of 1.37%, which can be maintained at 90% after 240 h of storage under ambient condition. Our results demonstrate the feasibility of employing vapor deposition technique to fabricate high-quality double perovskite thin films, which paves the way for further development of various optoelectronic devices based on these promising lead-free semiconductors.
引用
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页数:6
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