Silicon nanoparticles embedded in SiO2 films with visible photoluminescence

被引：35
|
作者：
Makimura, T [1 ]
Kunii, Y [1 ]
Ono, N [1 ]
Murakami, K [1 ]
机构：
[1] Univ Tsukuba, Inst Mat Sci, Tsukuba, Ibaraki 305, Japan
来源：
APPLIED SURFACE SCIENCE | 1998年 / 127卷
关键词：
visible photoluminescence; nanoparticles; silicon; silicon dioxide;
D O I：
10.1016/S0169-4332(97)00661-2
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Applying laser ablation technique, we have synthesized two types of SiO2 films that included nanometer-sized Si particles. One is synthesized by alternative deposition of Si nanoparticle layers and SiO, lavers. The synthesized film exhibits red photoluminescence (PL) with a peak energy below 1.5 eV. The other is a SiO2 film in which Si nanocrystallites precipitate. The films were synthesized by annealing at 1000 degrees C of SiOx films which are formed by laser ablation in diluted O-2 gas. The films exhibit PL with peak energies of 1.5 eV, 2.2 eV and 2.7 eV. We find that there is a narrow range of composition for efficient 1.5-eV PL. (C) 1998 Elsevier Science B.V.
引用
收藏
页码：388 / 392
页数：5
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