Reexamination of the π-Bond Strengths Within H2C=XHn Systems: A Theoretical Study

被引:4
作者
Chen, Jun-Xian [1 ]
Kim, Chang Kon [1 ]
Lee, Hai Whang [1 ]
Xue, Ying [2 ]
Kim, Chan Kyung [1 ]
机构
[1] Inha Univ, Dept Chem, Inchon 402751, South Korea
[2] Sichuan Univ, Coll Chem, Chengdu 610064, Peoples R China
关键词
divalent state stabilization energy; pi-bond energies in doubly-bonded species; electron correlation effects; partly-substituted DSSE; SILICON-CONTAINING COMPOUNDS; PULL CONJUGATED COMPOUNDS; DISSOCIATION ENERGIES; ROTATIONAL BARRIERS; THERMOCHEMISTRY; HEATS;
D O I
10.1002/jcc.21718
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
The accurate determination of pi-bond energies, D-pi, in doubly-bonded species has been an important issue in theoretical chemistry. The procedure using the divalent state stabilization energy defined by Walsh has been suggested, and the procedure seems to be conceptually reasonable and applicable to all kinds of doubly-bonded species. Therefore, the aim of this study was to examine whether the procedure could be a reliable methodology for estimating the D-pi values for a variety of H2C=XHn species. To achieve a higher accuracy, the D-pi values were estimated at QCISD(T)/6-311++G(3df,2p) level of theory combined with isogyric correction. The D-pi values estimated in this work were in excellent agreement with the extant literature values. On the other hand, in determining accurate D-pi values for doubly bonded species, especially in species with lone-pair electrons such as H2C=O, it has been found that consideration of highly sophisticated electron correlation effects could be important. However, sufficiently accurate D-pi values have been obtainable at QCISD(T) or CCSD(T) levels with a 6-311++G(3df, 2p) basis set on geometries at relatively inferior correlated levels such as MP2 and B3LYP levels with a 6-31+G(d) basis set. (C) 2010 Wiley Periodicals, Inc. J Comput Chem 32: 1361-1367, 2011
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页码:1361 / 1367
页数:7
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