Enhancement of light output intensity by integrating ZnO nanorod arrays on GaN-based LLO vertical LEDs

被引：29

作者：

Chiu, C. H. ^{[1
]}

Lee, C. E. ^{[1
]}

Chao, C. L. ^{[1
]}

Cheng, B. S. ^{[1
]}

Huang, H. W. ^{[1
]}

Kuo, H. C. ^{[1
]}

Lu, T. C. ^{[1
]}

Wang, S. C. ^{[1
]}

Kuo, W. L. ^{[2
]}

Hsiao, C. S. ^{[2
]}

Chen, S. Y. ^{[2
]}

机构：

[1] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Dept Mat Sci & Engn, Hsinchu 300, Taiwan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2008年 / 11卷 / 04期

关键词：

D O I：

10.1149/1.2837644

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Enhancement of light output intensity for GaN-based vertical light-emitting diodes (LEDs), combining wafer bonding and the laser lift-off (LLO) process, employing an omnidirectional extraction surface with synthesized single-crystal ZnO nanorod arrays in aqueous solution at room temperature is presented. The light output intensity and wall-plug efficiency of the GaN-based LLO vertical LED with the omnidirectional extraction surface by ZnO nanorod arrays shows 38.9 and 41.2% increases, respectively, at 200 mA current injections compared to that of a vertical LED without ZnO nanorod arrays. The ZnO nanorod arrays not only support a current spreading layer but enhance the probability of photon escape through the omnidirectional extraction surface. (C) 2008 The Electrochemical Society.

引用

页码：H84 / H87

页数：4

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