The influence of argon pressure and RF power on the growth of InP thin films

被引：12

作者：

Chandra, G. Hema ^{[1
]}

Perez de la Cruz, J. ^{[1
]}

Ventura, J. ^{[2
]}

机构：

[1] INESC Porto, P-4169007 Oporto, Portugal

[2] IFIMUP, P-4169007 Oporto, Portugal

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2011年 / 26卷 / 07期

关键词：

CHEMICAL-VAPOR-DEPOSITION; MOLECULAR-BEAM EPITAXY; PULSED-LASER DEPOSITION; SPRAY-PYROLYSIS METHOD; SOLAR-CELLS; MORPHOLOGY; FABRICATION; PHOSPHORUS; MOCVD;

D O I：

10.1088/0268-1242/26/7/075017

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium phosphide thin films were grown onto glass substrates by RF magnetron sputtering. In this paper, we present a study on the role of argon pressure and rf power on magnetron sputtered InP films. These sputtering parameters are shown to affect the deposition rate, structure, morphology, electrical and optical properties of InP films. Single-phase, nearly stoichiometric and polycrystalline films exhibiting zinc blende structure with strong preferred orientation along (1 1 1) were observed at an argon pressure of 0.4 Pa, by keeping the substrate temperature (448 K) and RF power (150 W) constant. Hall measurements indicated n-type conductivity in InP films. The optical absorption studies indicated a direct band gap of 1.35 eV.

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页数：8

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共 35 条

[1] The morphology and structural properties of InP thin films deposited by spray pyrolysis method [J].

Aksoy, Funda ;

Kayali, Refik ;

Oeztas, Mustafa ;

Bedir, Metin .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 2008, 69 (04) :835-838

[2] A structural and optical study of sputtered InP films as a function of preparation temperature [J].

Baker, SH ;

Bayliss, SC ;

Gurman, SJ ;

Elgun, N ;

Davis, EA .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1996, 8 (10) :1591-1605

[3] SCATTERING PROCESSES IN POLYCRYSTALLINE INP FILMS [J].

CHATTOPADHYAY, KK ;

DHAR, A ;

CHAUDHURI, S ;

PAL, AK .

THIN SOLID FILMS, 1992, 208 (01) :100-105

[4] The influence of deposition conditions on structure and morphology of aluminum nitride films deposited by radio frequency reactive sputtering [J].

Cheng, H ;

Sun, Y ;

Hing, P .

THIN SOLID FILMS, 2003, 434 (1-2) :112-120

[5] Fabrication and characterization of InP nanocrystals embedded in SiO2 matrix by RF magnetron co-sputtering [J].

Ding, RQ ;

Wang, H ;

Yang, HD ;

She, WL ;

Qiu, ZR ;

Luo, L ;

Lau, WF ;

Cheung, WY ;

Wong, SP .

MATERIALS CHEMISTRY AND PHYSICS, 2002, 76 (03) :262-266

[6] Influence of the deposition conditions on the crystallographic structure and the GaAs refraction index [J].

El Hadadi, Benachir ;

Lbibb, Rachid ;

Slaoui, Abdelkarim .

VACUUM, 2009, 83 (08) :1100-1105

[7] SURFACE MODIFICATION OF III-V COMPOUND SEMICONDUCTORS USING SURFACE ELECTROMAGNETIC-WAVE ETCHING INDUCED BY ULTRAVIOLET-LASERS [J].

EZAKI, M ;

KUMAGAI, H ;

TOYODA, K ;

OBARA, M .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (03) :841-847

[8] PRESSURE OF PHOSPHORUS IN EQUILIBRIUM WITH SOLID INP AT DIFFERENT TEMPERATURES [J].

FORNARI, R ;

BRINCIOTTI, A ;

SENTIRI, A ;

GOROG, T ;

CURTI, M ;

ZUCCALLI, G .

JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) :2406-2409

[9] Indium phosphide films prepared by flash evaporation technique: Synthesis and characterization [J].

Gayen, R. N. ;

Das, S. N. ;

Dalui, S. ;

Paul, R. ;

Bhar, R. ;

Pal, A. K. .

THIN SOLID FILMS, 2010, 518 (14) :3595-3603

[10] Pulsed laser deposition of InP thin films on sapphire(1000) and GaAs(100) [J].

Hafez, MA ;

Elamrawi, KA ;

Elsayed-Ali, HE .

APPLIED SURFACE SCIENCE, 2004, 239 (01) :36-44

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