Downsizing of silicon MOSFETs beyond 0.1 μm

被引：11

作者：

Iwai, H ^{[1
]}

机构：

[1] Toshiba Co Ltd, Microelect Engn Lab, Saiwai Ku, Kawasaki, Kanagawa 210, Japan

来源：

MICROELECTRONICS JOURNAL | 1998年 / 29卷 / 10期

关键词：

CMOS scaling; MOSFET downsizing; silicon LSIs;

D O I：

10.1016/S0026-2692(98)00032-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper gives an overview of CMOS scaling in the range of sub-0.1 mu m. Recent advance in the downsizing of MOSFETs by using various new techniques is described. Possible limitation and of MOSFET downsizing is predicted. A future concept of silicon LSIs in the 2010s is discussed. (C) 1998 Elsevier Science Ltd. All rights reserved.

引用

页码：671 / 678

页数：8

共 16 条

[1] DEEP-SUBMICROMETER MOS DEVICE FABRICATION USING A PHOTORESIST-ASHING TECHNIQUE [J].

CHUNG, J ;

JENG, MC ;

MOON, JE ;

WU, AT ;

CHAN, TY ;

KO, PK ;

HU, CM .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (04) :186-188

[2] DESIGN OF ION-IMPLANTED MOSFETS WITH VERY SMALL PHYSICAL DIMENSIONS [J].

DENNARD, RH ;

GAENSSLEN, FH ;

YU, HN ;

RIDEOUT, VL ;

BASSOUS, E ;

LEBLANC, AR .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) :256-268

[3] SCALING THE MOS-TRANSISTOR BELOW 0.1 MU-M - METHODOLOGY, DEVICE STRUCTURES, AND TECHNOLOGY REQUIREMENTS [J].

FIEGNA, C ;

IWAI, H ;

WADA, T ;

SAITO, M ;

SANGIORGI, E ;

RICCO, B .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1994, 41 (06) :941-951

[4]

Fiegna C., 1993, S VLSI TECH, P33

[5]

Momose H. S., 1989, International Electron Devices Meeting 1989. Technical Digest (Cat. No.89CH2637-7), P267, DOI 10.1109/IEDM.1989.74276

[6]

MOMOSE HS, 1994, INTERNATIONAL ELECTRON DEVICES MEETING 1994 - IEDM TECHNICAL DIGEST, P593, DOI 10.1109/IEDM.1994.383340

[7] High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs [J].

Momose, HS ;

Morifuji, E ;

Yoshitomi, T ;

Ohguro, T ;

Saito, M ;

Morimoto, T ;

Katsumata, Y ;

Iwai, H .

IEDM - INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST 1996, 1996, :105-108

[8]

Momose HS, 1997, ELEC SOC S, V1997, P235

[9]

Morimoto T., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P429, DOI 10.1109/IEDM.1990.237140

[10]

Ohguro T, 1997, ELEC SOC S, V1997, P275

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