Performance Analysis of Low Power and High Frequency Novel RF Power Amplifier for 4G Systems Optimization of Performance characteristics of RF Power Amplifier

被引：0
|
作者：
Guha, Koushik [1 ]
Ganguly, Purbashis [1 ]
Baishya, Srimanta [1 ]
机构：
[1] NIT Silchar, Dept ECE, Silchar, Assam, India
来源：
2013 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC) | 2013年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper deals with the design and simulation of low power and highly efficient RF Power Amplifiers for 4th Generation Wireless Systems. Efficient Linearization and Bandwidth Enhancement techniques are implemented to increase the performance metrics of the power amplifier under consideration. A 90nm CMOS, 60 GHz fully integrated power amplifier has been designed for the 4th Generation Wireless Systems. It has been optimized to deliver maximum linear output power and a considerable amount of gain in the VHF band around 60 GHz. The schematic of the two stage power amplifier has been designed using Agilent's Advanced Design System software. The schematic is used to plot Gain, Linearity, Noise Figure and Stability.
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