A 10 GHz Integrated Single Sideband Upconverter in 0.25 μm BiCMOS Technology

被引：0
|
作者：
de Boer, Lex [1 ]
Rodenburg, Marien [1 ]
van Dijk, Raymond [1 ]
van Vliet, Frank E. [1 ]
Geurts, Marcel [2 ]
机构：
[1] TNO, Dept Transceivers, The Hague, Netherlands
[2] NXP Semicond, NL-6534 AE Nijmegen, Netherlands
来源：
2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE | 2011年
关键词：
component; frequency conversion; mixer; modulation; BiCMOS integrated circuits;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An 8 - 10 GHz linearised single-sideband Gilbert upconversion mixer is demonstrated in silicon BiCMOS technology. The QuBiC4X 0.25 mu m BiCMOS process of NXP has been used. The device has an integrated local oscillator driver with polyphase quadrature generation. The IF chain uses feedback, selectable gain settings and DC offset circuitry to be compatible with more than one type of direct digital synthesizer and to minimize spurious products that are not cancelled by the mixer concept. The device has sideband suppression of over 45 dB and third-order spurious suppression of over 40 dB.
引用
收藏
页码：562 / 565
页数：4
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