Ferroelectricity in Simple Binary Crystals

被引：17

作者：

Onodera, Akira ^{[1
]}

Takesada, Masaki ^{[1
]}

机构：

[1] Hokkaido Univ, Dept Phys, Fac Sci, Sapporo, Hokkaido 0600810, Japan

来源：

CRYSTALS | 2017年 / 7卷 / 08期

关键词：

ferroelectric; binary crystal; ZnO; HfO2; mixed bond; RUTILE TIO2; STABILITY; ZNO; PRESSURE;

D O I：

10.3390/cryst7080232

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The origin of ferroelectricity in doped binary crystals, Pb1-xGexTe, Cd1-xZnxTe, Zn1-xLixO, and Hf1-xZrxO2 is discussed, while no binary ferroelectrics have been reported except for two crystals, HCl and HBr. The ferroelectricity is induced only in doped crystals, which shows an importance of electronic modification in chemical bonds by dopants. The phenomenological and microscopic treatments are given for the appearance of ferroelectric activity. The discovery of ferroelectricity in binary crystals such as ZnO and HfO2 is of high interest in fundamental science and also in application for complementary metal-oxide semiconductor (CMOS) technology.

引用

页数：15

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