High responsivity and fast UV?vis?short-wavelength IR photodetector based on Cd3As2/MoS2 heterojunction

被引：22

作者：

Huang, Zehua ^{[1
]}

Jiang, Yadong ^{[1
]}

Han, Qi ^{[1
]}

Yang, Ming ^{[1
]}

Han, Jiayue ^{[1
]}

Wang, Fang ^{[2
,3
]}

Luo, Man ^{[2
]}

Li, Qing ^{[2
,3
]}

Zhu, He ^{[2
,3
]}

Liu, Xianchao ^{[1
]}

Gou, Jun ^{[1
]}

Wang, Jun ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Optoelect Sci & Engn, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

[2] Chinese Acad Sci, State Key Lab Infrared Phys, Shanghai Inst Tech Phys, 500 Yutian Rd, Shanghai 200083, Peoples R China

[3] Chinese Acad Sci, Univ Chinese Acad Sci, Hangzhou Inst Adv Study, Hangzhou 310024, Zhejiang, Peoples R China

来源：

NANOTECHNOLOGY | 2020年 / 31卷 / 06期

基金：

中国国家自然科学基金;

关键词：

3D Dirac semimetals; heterojunction; broadband; responsivity; photodetectors; INFRARED PHOTODETECTORS; GRAPHENE;

D O I：

10.1088/1361-6528/ab51d3

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

High responsivity, fast response time, ultra-wide detection spectrum are pursuing goals for state-of-art photodetectors. Cd3As2, as a three-dimensional (3D) Dirac semimetal, has a zero bandgap, high light absorption rate in broad spectral region, and higher mobility than graphene at room temperature. However, photoconductive detectors based Cd3As2 suffer low quantum efficiency due to the absence of high built-in field. Here, a Cd3As2 nanoplate/multilayer MoS2 heterojunction photodetector was fabricated which achieved a quite high responsivity of 2.7 & xfffd;& x5e0;10( )(3)A W-?1 at room temperature. The photodetector exhibits a short response time of in broad spectra region from ultraviolet (365 nm) to short-wavelength-infrared (1550 nm) and reached 65 ?s at 650 nm. This work provides a great potential solution for high-performance photodetector and broadband imaging by combining 3D Dirac semi-metal materials with semiconductor materials.

引用

页数：6

共 35 条

[31] Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions [J].

Yang, Tiefeng ;

Zheng, Biyuan ;

Wang, Zhen ;

Xu, Tao ;

Pan, Chen ;

Zou, Juan ;

Zhang, Xuehong ;

Qi, Zhaoyang ;

Liu, Hongjun ;

Feng, Yexin ;

Hu, Weida ;

Miao, Feng ;

Sun, Litao ;

Duan, Xiangfeng ;

Pan, Anlian .

NATURE COMMUNICATIONS, 2017, 8

[32] Room-temperature self-powered energy photodetector based on optically induced Seebeck effect in Cd3As2 [J].

Yavarishad, Niloufar ;

Hosseini, Tahereh ;

Kheirandish, Elaheh ;

Weber, Chris P. ;

Kouklin, Nikolai .

APPLIED PHYSICS EXPRESS, 2017, 10 (05)

[33] Near-Infrared Photodetector Based on MoS2/Black Phosphorus Heterojunction [J].

Ye, Lei ;

Li, Hao ;

Chen, Zefeng ;

Xu, Jianbin .

ACS PHOTONICS, 2016, 3 (04) :692-699

[34] Evolution of Weyl orbit and quantum Hall effect in Dirac semimetal Cd3As2 [J].

Zhang, Cheng ;

Narayan, Awadhesh ;

Lu, Shiheng ;

Zhang, Jinglei ;

Zhang, Huiqin ;

Ni, Zhuoliang ;

Yuan, Xiang ;

Liu, Yanwen ;

Park, Ju-Hyun ;

Zhang, Enze ;

Wang, Weiyi ;

Liu, Shanshan ;

Cheng, Long ;

Pi, Li ;

Sheng, Zhigao ;

Sanvito, Stefano ;

Xiu, Faxian .

NATURE COMMUNICATIONS, 2017, 8

[35] Characterization of atomic defects on the photoluminescence in two-dimensional materials using transmission electron microscope [J].

Zhang, Jiayan ;

Yu, Ye ;

Wang, Peng ;

Luo, Chen ;

Wu, Xing ;

Sun, Ziqi ;

Wang, Jianlu ;

Hu, Wei Da ;

Shen, Guozhen .

INFOMAT, 2019, 1 (01) :85-97

← 1 2 3 4 →