High responsivity and fast UV?vis?short-wavelength IR photodetector based on Cd3As2/MoS2 heterojunction

High responsivity, fast response time, ultra-wide detection spectrum are pursuing goals for state-of-art photodetectors. Cd3As2, as a three-dimensional (3D) Dirac semimetal, has a zero bandgap, high light absorption rate in broad spectral region, and higher mobility than graphene at room temperature. However, photoconductive detectors based Cd3As2 suffer low quantum efficiency due to the absence of high built-in field. Here, a Cd3As2 nanoplate/multilayer MoS2 heterojunction photodetector was fabricated which achieved a quite high responsivity of 2.7 & xfffd;& x5e0;10( )(3)A W-?1 at room temperature. The photodetector exhibits a short response time of in broad spectra region from ultraviolet (365 nm) to short-wavelength-infrared (1550 nm) and reached 65 ?s at 650 nm. This work provides a great potential solution for high-performance photodetector and broadband imaging by combining 3D Dirac semi-metal materials with semiconductor materials.