Stability of La2O3 and GeO2 passivated Ge surfaces during ALD of ZrO2 high-k dielectric

被引：28

作者：

Bethge, O. ^{[1
]}

Henkel, C. ^{[1
]}

Abermann, S. ^{[2
]}

Pozzovivo, G. ^{[1
]}

Stoeger-Pollach, M. ^{[3
]}

Werner, W. S. M. ^{[4
]}

Smoliner, J. ^{[1
]}

Bertagnolli, E. ^{[1
]}

机构：

[1] Vienna Univ Technol, Inst Solid State Elect, A-1040 Vienna, Austria

[2] Austrian Inst Technol, Dept Energy, A-1210 Vienna, Austria

[3] Vienna Univ Technol, USTEM, A-1040 Vienna, Austria

[4] Vienna Univ Technol, Inst Appl Phys, A-1040 Vienna, Austria

来源：

APPLIED SURFACE SCIENCE | 2012年 / 258卷 / 08期

基金：

奥地利科学基金会;

关键词：

ALD; ZrO2; La2O3; GeO2; Ge; MOS capacitor; MOS DEVICES; LAYER; CAPACITORS; DEPOSITION; OXIDES;

D O I：

10.1016/j.apsusc.2011.11.094

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

La2O3 grown by atomic layer deposition (ALD) and thermally grown GeO2 are used to establish effective electrical surface passivations on n-type (1 0 0)-Ge substrates for high-k ZrO2 dielectrics, grown by ALD at 250 degrees C substrate temperature. The electrical characterization of MOS capacitors indicates an impact of the Ge-surface passivation on the interfacial trap density and the frequency dependent capacitance in the inversion regime. Lower interface trap densities can be obtained for GeO2 based passivation even though a chemical decomposition of the oxidation states occur during the ALD of ZrO2. As a consequence the formation of a ZrGeOx compound inside the ZrO2 matrix and a decline of the interfacial GeO2 are observed. The La2O3 passivation provides a stable amorphous lanthanum germanate phase at the Ge interface but also traces of Zr germanate are indicated by X-ray-Photoelectron-Spectroscopy and Transmission-Electron-Microscopy. (C) 2011 Elsevier B.V. All rights reserved.

引用

页码：3444 / 3449

页数：6

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