Simulation of clustering and pile-up during post-implantation annealing of phosphorus in silicon

We report on the simulation of the annealing behavior of medium dose (10(13)-10(14) cm(-2)) implanted phosphorus in silicon. It is shown that the transient clustering of phosphorus has to be taken into account in order to achieve consistent simulation results. The pile-up of phosphorus at the silicon-silicondioxide interface is considered by including a diffusion-segregation term in the diffusion-reaction equations. We show how the phosphorus clustering impacts the phosphorus amount in the pile-up layer and compare the simulation results with available experimental data.