Low DC-power Ku-band differential VCO based on an RTD/HBT MMIC technology

被引：24

作者：

Choi, S ^{[1
]}

Jeong, Y ^{[1
]}

Yang, KH ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Elect Engn & Comp Sci, Taejon 305701, South Korea

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2005年 / 15卷 / 11期

关键词：

heterojunction bipolar transistor (HBT); resonant tunneling diode (RTD); varactor; voltage controlled oscillator (VCO);

D O I：

10.1109/LMWC.2005.858991

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents the design and fabrication of a Ku-band differential-mode voltage-controlled oscillator (VCO) with extremely low power consumption and good phase noise characteristics based on a monolithic InP-based resonant tunneling diode/heterojunction bipolar transistor (RTD)/(HBT) technology. In order to reduce the power consumption, an InP-based RTD is used for microwave power generation, which shows the negative resistance characteristics at a low voltage. The fabricated VCO shows an extremely low dc power consumption of 1.42 mW and fairly good phase noise performance of -112 dBc/Hz at 1-MHz frequency offset. The figure-of-merit (FOM), which is used for comparing the performance of the fabricated oscillator with the previously reported results, was obtained to be -195 dBc/Hz. The obtained FOM is one of the best values among Ku-band differential VCOs reported so far.

引用

页码：742 / 744

页数：3

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