Novel methods to incorporate deuterium in the MOS structures

被引：9

作者：

Lee, MH ^{[1
]}

Lin, CH ^{[1
]}

Liu, CW ^{[1
]}

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10764, Taiwan

来源：

IEEE ELECTRON DEVICE LETTERS | 2001年 / 22卷 / 11期

关键词：

deuterium incorporation; interface states; MOS; very high vacuum prebake;

D O I：

10.1109/55.962649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The deuterium concentration as high as 2 x 10(20) cm(-3) can be incorporated in rapid thermal oxide layers by a process of deuterium prebake and deuterium post oxidation anneal. The deuterium distributed not only at Si/oxide interface but also in the bulk oxide. The deuterium incorporation shows the improvement on soft breakdown characteristics and the interface state density at SiO2/Si after stress. The addition of very high vacuum prebake process yields a deuterium concentration of 9 x 10(20) cm(-3), but also leads to the formation of rough oxide.

引用

页码：519 / 521

页数：3

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