A Dual-Element VNA Electronic Calibration in CMOS

被引:0
|
作者
Chien, Jun-Chau [1 ,2 ]
Arbabian, Amin [2 ]
Niknejad, Ali M. [1 ]
机构
[1] Univ Calif Berkeley, Berkeley, CA 94720 USA
[2] Stanford Univ, Stanford, CA 94305 USA
来源
2018 IEEE 18TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF) | 2018年
关键词
electronic calibration; de-embedding; TRL; LRRM; CMOS; impedance modulation; dual-element;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This paper presents a dual-element direct on-wafer VNA calibration algorithm using calibration standards fabricated in 65-nm CMOS technology. To solve for the seven unknowns in the two-port error models, the proposed algorithm utilizes a thru and a pi structure where the later consists of three NMOS transistors whose impedances can be modulated independently through the corresponding gate bias. The algorithm is validated against on-wafer TRL with experimental results from 1 to 67 GHz. By minimizing the number of probe landings and calibration standards using CMOS technology, the presented approach shows potential for more accurate measurements at nanoscale transistor structures.
引用
收藏
页码:71 / 74
页数:4
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