Investigation of charge transport properties of [1]Benzothieno[3,2-b] [1]-benzothiophene single-crystals in field-effect transistor configuration

被引：8
|
作者：
Liu, Xiao [1 ,2 ]
Su, Xiaolu [1 ]
Livache, Clement [2 ]
Chamoreau, Lise-Marie [1 ]
Sanaur, Sebastien [3 ]
Sosa-Vargas, Lydia [1 ]
Ribierre, Jean-Charles [4 ]
Kreher, David [1 ]
Lhuillier, Emmanuel [2 ]
Lacaze, Emmanuelle [2 ]
Mathevet, Fabrice [1 ]
机构：
[1] Sorbonne Univ, Fac Sci, IPCM, CNRS,UMR 8232, 4 Pl Jussieu, F-75005 Paris, France
[2] Sorbonne Univ, Fac Sci, INSP, CNRS,UMR 7588, 4 Pl Jussieu, F-75005 Paris, France
[3] IMT Mines St Etienne, Dept Flexible Elect, Provence Microelect Ctr, F-13541 Gardanne, France
[4] Zhejiang Univ, Coll Opt Sci & Engn, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China
来源：
ORGANIC ELECTRONICS | 2020年 / 78卷
基金：
欧洲研究理事会;
关键词：
Semiconducting materials; Thienoacene derivative; Single crystals; Organic field effect transistors; HIGH-PERFORMANCE; LOW-VOLTAGE; ELECTRONIC TRANSPORT; ELECTRICAL-TRANSPORT; SEMICONDUCTORS; MORPHOLOGY; MOBILITY; FILMS; AIR;
D O I：
10.1016/j.orgel.2019.105605
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-crystals of unsubstituted [1]Benzothieno [3,2-b][1]-benzothiophene (BTBT) were prepared by physical vapor transport deposition (VTP). The packing structure and morphology of the crystals were studied by X-ray diffraction (XRD), polarized optical microscopy (POM), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The charge transport properties of BTBT single-crystals were also investigated via bottom contact/bottom gate (BC/BG) organic field-effect transistors (OFETs) on both SiO2 and n-octadecyltrichlomsilane (OTS) treated surfaces. A maximum hole mobility value of 0.032 cm(2)V(-1)s(-1) was measured on the OTS substrate. In addition, single-crystal OFETs with ion gel top gate (TG) configuration were also investigated for low voltage operation. This work represents the first investigation of charge carrier mobility of a simple BTBT in transistor configuration and highlights the essential role of the BTBT substitution in charge transport properties.
引用
收藏
页数：7
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