Effect of facet roughness on etched-facet semiconductor laser diodes

被引：18
作者：
Francis, DA
ChangHasnain, CJ
Eason, K
机构：
[1] E. L. Ginzton Laboratories, Stanford University, California
来源：
APPLIED PHYSICS LETTERS | 1996年 / 68卷 / 12期
关键词：
D O I：
10.1063/1.115663
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We calculate the effects of facet roughness on laser performance of etched-facet semiconductor diode lasers. Facet roughness can be caused by the finite pixel size, used in photolithographic mask fabrication, or in the facet etching process. We consider various sizes of roughness and show that appreciable effects can result from roughness levels previously considered optically flat. Far-field shifts and modal coupling caused by facet roughness are also calculated. Results are highly useful for designing lasers with curved or arbitrarily oriented facts such as unstable resonators or beam steering fan laser diodes. (C) 1996 American Institute of Physics.
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页码：1598 / 1600
页数：3
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