Atomic structure of misfit dislocations at InAs/GaAs(110)

被引：11

作者：

Choudhury, R. ^{[1
,3
]}

Bowler, D. R. ^{[1
,2
,3
]}

Gillan, M. J. ^{[1
,2
,3
]}

机构：

[1] UCL, Dept Phys & Astron, London WC1E 6BT, England

[2] UCL, Mat Simulat Lab, London WC1E 6BT, England

[3] UCL, London Ctr Nanotechnol, London WC1H 0AH, England

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2008年 / 20卷 / 23期

关键词：

D O I：

10.1088/0953-8984/20/23/235227

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Heteroepitaxy of InAs on GaAs(110) leads to the formation of subsurface misfit dislocations to relieve strain. These dislocations have been observed both with transmission electron microscopy (TEM) and scanning tunnelling microscopy (STM), and show regular spacing. Electronic structure calculations of the structure of the core of the dislocations, as well as their location within the epitaxial layer, are presented. The most stable location is found to be at the interface, with the core centred over In. Calculated strain profiles and the thickness at which dislocations should form are in good agreement with available experimental data.

引用

页数：7

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