Electron heating in Al0.15Ga0.85N/GaN heterostructures grown on p-type Si

被引：2

作者：

Lin, Li-Hung ^{[1
,2
]}

Chen, Kui-Ming ^{[1
]}

Han, Shiou-Shian ^{[1
]}

Liang, C. -T. ^{[3
,4
]}

Hsueh, Wen-Chang ^{[3
]}

Chen, Kuang Yao ^{[3
]}

Sun, Zhi-Hao ^{[3
]}

Chang, P. H. ^{[5
]}

Chen, N. C. ^{[5
]}

Chang, Chin-An ^{[5
]}

机构：

[1] Natl Chiayi Univ, Inst Optoelect & Solid State Elect, Chiayi 60004, Taiwan

[2] Natl Chiayi Univ, Dept Appl Phys, Chiayi 60004, Taiwan

[3] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan

[4] Natl Taiwan Univ, Inst Astrophys, Taipei 10617, Taiwan

[5] Chang Gung Univ, Dept Elect Engn, Tao Yuan 333, Taiwan

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2007年 / 40卷 / 02期

关键词：

two-dimensional electron system; current scaling; electron heating; GaN; Si;

D O I：

10.1016/j.physe.2007.06.029

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The transport behaviors of two GaN/AlGaN two-dimensional electron systems (2DESs) grown on Si substrates were studied, and a SiNx treatment employed in sample fabrication enhanced the conductance of one of the 2DESs. We study the electron heating effect in the 2DESs experimentally, with resistances as self-thermometers. The relation of T-e similar to I-1.42 was obtained, which is in contrast to T-e similar to I-0.5 in the resistivity peaks in a GaAs/AlGaAs 2DES. This may be caused by the scattering effect in this sample. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：343 / 346

页数：4

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