Proton implantation effects on electrical and luminescent properties of p-GaN

被引：34
|
作者：
Polyakov, AY
Smirnov, NB
Govorkov, AV
Pearton, SJ
Zavada, JM
机构：
[1] Inst Rare Met, Moscow 119017, Russia
[2] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[3] USA, Res Off, Res Triangle Pk, NC 27709 USA
来源：
JOURNAL OF APPLIED PHYSICS | 2003年 / 94卷 / 05期
关键词：
D O I：
10.1063/1.1600828
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical properties, deep level spectra, and microcathodoluminescence (MCL) spectra of p-GaN films implanted with 100 keV protons are reported. Measurable decreases of the MCL intensity began for doses as low as 10(12) cm(-2), while measurable decreases of the hole concentration started for doses of 10(13) cm(-2). The main deep traps introduced by protons had activation energies of 0.3, 0.6, and 0.9 eV. The 0.3 and 0.9 eV traps are located in the lower half of the band gap and determine the temperature dependence of the forward current in heavily proton implanted Schottky diodes. (C) 2003 American Institute of Physics.
引用
收藏
页码：3069 / 3074
页数：6
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