Dissociative photoionization of SiF4 around the Si 2p edge:: a new TOFMS study with improved mass resolution

被引：24
|
作者：
Santos, ACF [1 ]
Lucas, CA [1 ]
de Souza, GGB [1 ]
机构：
[1] Univ Fed Rio de Janeiro, Inst Quim, BR-21949900 Rio De Janeiro, Brazil
来源：
JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA | 2001年 / 114卷
关键词：
PEPICO; TOFMS; photoionization; SiF4;
D O I：
10.1016/S0368-2048(00)00311-X
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Mass spectra, with improved mass resolution, have been obtained for the SiF4 molecule, using time-of-flight mass spectrometry and synchrotron radiation, below and above the Si 2p ionization edge (L-III, 111.7 eV). New branching ratios for the ionic dissociation have been determined and compared to previous results. The excellent signal-to-noise ratio has also allowed for the first observation of a rearrangement fragment (F-2(+)) in photoionization studies of the SiF4 molecule. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：115 / 121
页数：7
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