Band structure at heterojunction interfaces of GaInP solar cells

被引：10

作者：

Gudovskikh, A. S. ^{[1
]}

Kleider, J. P. ^{[2
]}

Kalyuzhnyy, N. A. ^{[3
]}

Lantratov, V. M. ^{[3
]}

Mintairov, S. A. ^{[3
]}

机构：

[1] Russian Acad Sci, St Petersburg Phys & Technol Ctr Res & Educ, St Petersburg 194021, Russia

[2] UPMC Univ Paris 06, Univ Paris 11, SUPELEC, LGEP,CNRS,UMR 8507, F-91192 Gif Sur Yvette, France

[3] AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

III/V Solar cells; Interfaces; Heterojunction; PARAMETERS; GAAS;

D O I：

10.1016/j.solmat.2010.06.027

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Experimental study of the band structure at the heterojunction interfaces of GaInP solar cells was performed by admittance spectroscopy. Admittance measurements were analyzed using numerical simulations. A good agreement between simulation and experiment was obtained. A potential barrier of about 0.6 eV at the p-GaAs/p-AlInP interface formed due to the high valence band offset was observed by the experiment. This high barrier creates fundamental limitation for the usage of this interface in p-n GaInP solar cells. A way to reduce the effective barrier height to 0.25 +/- 0.02 eV using a double layer p-AlGaAs/p-AlGaInP window avoiding deterioration of I-V curves was demonstrated. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：1953 / 1958

页数：6

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