Synthesis of heterostructure SnO2/graphitic carbon nitride composite for high-performance electrochemical supercapacitor

被引:32
|
作者
Xu, Yingxi [1 ]
Wang, Li [1 ]
Zhou, Yafang [1 ]
Guo, Jianyu [1 ]
Zhang, Siyong [1 ]
Lu, Yan [2 ]
机构
[1] Shanghai Normal Univ, Dept Chem, Shanghai 200234, Peoples R China
[2] Shanghai Inst Technol, Sch Engn & Innovat, Shanghai 201418, Peoples R China
基金
中国国家自然科学基金;
关键词
Supercapacitor; Electrode material; SnO2/g-C3N4; composite; Heterostructure; SNO2; NANOCRYSTALS; FACILE SYNTHESIS; OXIDE; NANOSHEETS; G-C3N4; NANOCOMPOSITES; PHOTOCATALYST; CAPACITORS; ELECTRODE; GROWTH;
D O I
10.1016/j.jelechem.2019.113507
中图分类号
O65 [分析化学];
学科分类号
070302 ; 081704 ;
摘要
The SnO2/g-C3N4 heterostructure composite is prepared by a simple hydrothermal reaction. The composite can be a supercapacitor electrode material and exhibits good specific capacitance of 488 F g(-1) at the current density of 1 A g(-1) within a potential window of 0-1 V in 1 M H2SO4 solution. After 5000 cycles, the heterostructure SnO2/g-C3N4 composite shows 97.2% and 73.4% of the capacitance retention rate at the current densities of 10 A g(-1) and 20 A g(-1), respectively. A symmetric supercapacitor device is successfully fabricated based on the SnO2/g-C3N4 composite, which shows a specific capacitance of 153 F g(-1). Moreover, the device can deliver the energy density of 2.8 Wh kg(-1) at the power density of 5684 W kg(-1).
引用
收藏
页数:7
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