Vapor phase self-assembly of molecular gate dielectrics for thin film transistors

被引：62
|
作者：
DiBenedetto, Sara A.
Frattarelli, David
Ratner, Mark A.
Facchetti, Antonio
Marks, Tobin J.
机构：
[1] Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
[2] Northwestern Univ, Mat Res Ctr, Evanston, IL 60208 USA
来源：
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY | 2008年 / 130卷 / 24期
关键词：
D O I：
10.1021/ja801309g
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
Organic-inorganic films grown entirely via a vapor-phase deposition process and composed of highly polarizable molecular structures are investigated as gate dielectrics in organic field-effect transistors(OFETs). Molecules 1 and 2 form self-ordered thin films via hydrogen bonding, and these organic-inorganic structures exhibit large capacitances and large pentacene OFET mobilities.
引用
收藏
页码：7528 / +
页数：3
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