Thermal Conversion of Electronic and Electrical Properties of AuCl3-Doped Single-Walled Carbon Nanotubes

被引:36
作者
Yoon, Seon-Mi [1 ]
Kim, Un Jeong [1 ]
Benayad, Anass [1 ]
Lee, Ii Ha [2 ]
Son, Hyungbin [1 ]
Shin, Hyeon-Jin [1 ]
Choi, Won Mook [1 ]
Lee, Young Hee [2 ]
Jin, Yong Wan [1 ]
Lee, Eun-Hong [1 ]
Lee, Sang Yoon [1 ]
Choi, Jae-Young [1 ]
Kim, Jong Min [1 ]
机构
[1] Samsung Adv Inst Technol, Yongin 44671, Gyeonggi Do, South Korea
[2] Sungkyunkwan Univ, Phys Div BK21, Sungkyunkwan Adv Inst Nanotechnol, Ctr Nanotubes & Nanostruct Composites, Suwon 440746, South Korea
关键词
carbon nanotubes; gold chloride; thermal treatment; doping; transistor; THIN-FILM TRANSISTORS; RAMAN-SCATTERING; DEVICES; GROWTH;
D O I
10.1021/nn103055u
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
By using carbon-free inorganic atomic layer involving heat treatment from 150 to 300 degrees C, environmentally stable and permanent modulation of the electronic and electrical properties of single-walled carbon nanotubes (SWCNTs) from p-type to ambi-polar and possibly to n-type has been demonstrated. At low heat treatment temperature, a strong p-doping effect from Au3+ ions to CNTs due to a large difference in reduction potential between them is dominant. However at higher temperature, the gold species are thermally reduced, and thermally induced CNT-CI finally occurs by the decomposition reaction of AuCl3. Thus, in the AuCl3-doped SWCNTs treated at higher temperature, the p-type doping effect is suppressed and an n-type property from CNT-CI is thermally Induced. Thermal conversion of the majority carrier type of AuCl3-doped SWNTs is systematically investigated by combining various optical and electrical tools.
引用
收藏
页码:1353 / 1359
页数:7
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