A High-Performance SiC Super-Junction MOSFET With a Step-Doping Profile

被引：7
作者：
Huang, Hao [1 ]
Wang, Ying [1 ]
Yu, Cheng-Hao [1 ]
Tang, Zhao-Huan [2 ]
Li, Xing-Ji [3 ]
Yang, Jian-Qun [3 ]
Cao, Fei [1 ]
机构：
[1] Hangzhou Dianzi Univ, Key Lab RF Circuits & Syst, Minist Educ, Hangzhou 310018, Peoples R China
[2] China Elect Technol Grp Corp, Natl Key Lab Analog Integrated Circuits, Chongqin 400060, Peoples R China
[3] Harbin Inst Technol, Natl Key Lab Mat Behav & Evaluat Technol Space En, Harbin 150080, Peoples R China
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2021年 / 9卷
基金：
中国国家自然科学基金;
关键词：
Silicon carbide; Electric fields; MOSFET; Semiconductor process modeling; Performance evaluation; Logic gates; JFETs; SiC MOSFET; breakdown voltage; specific on-resistance; figure of merit; SINGLE-EVENT BURNOUT; IMPACT IONIZATION COEFFICIENTS; POWER; MOBILITY; DIODES; LAYERS; 6H;
D O I：
10.1109/JEDS.2021.3125706
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this article, we investigate a 4H-SiC super- junction (SJ) MOSFET structure with a charge-imbalance doping-profile. According to our numerical simulations and comparisons with the conventional SiC VDMOS (C-VDMOS) and SiC SJ VDMOS (SJ-VDMOS) devices, the SJ-MOD structure offers a better trade-off between breakdown voltage (BV) and specific on-resistance (R-on,R-sp). This leads to a high figure of merit (FOM=BV2/R-on,R-sp). In addition, due to the reduced electric field peak, the single-event burnout (SEB) of the device is significantly improved. The simulation results indicate that, using a LET value of 0.1 pC/mu m and a 3000K global device temperature as the criterion for burning, the specific burnout-threshold voltage (using the optimal parameters of the proposed structure) exceeds that of the conventional structure. This indicates that the modified super-junction structure can indeed be used for different voltage-classes of the hardening SiC super-junction devices in the future.
引用
收藏
页码：1084 / 1092
页数：9
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