A 65 V Operation High Power X-band GaN HEMT Amplifier

被引：0

作者：

Kikuchi, Ken ^{[1
]}

Nishihara, Makoto ^{[1
]}

Yamamoto, Hiroshi ^{[1
]}

Mizuno, Shinya ^{[1
]}

Yamaki, Fumikazu ^{[1
]}

Yamamoto, Takashi ^{[1
]}

机构：

[1] Sumitomo Elect Device Innovat Inc, Yamanashi Plant, 1000 Kamisukiawara, Showa, Yamanashi 4093883, Japan

来源：

2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年

关键词：

Gallium nitride; HEMTs; power amplifiers; X-band; ALGAN/GAN-HEMT;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The higher voltage operation is suitable for the higher output power amplification with the wider frequency response. Our developed GaN HEMT, featured with the high breakdown voltage property, realizes the 65 V operation delivering the output power of 310 W and power gain of 10 dB over the frequency range of 8.5 to 10.0 GHz under pulsed condition. These results proved an advantage of high drain voltage operation of GaN HEMT for high power and broadband X-band power amplifiers.

引用

页码：585 / 587

页数：3