A 65 V Operation High Power X-band GaN HEMT Amplifier

被引:0
作者
Kikuchi, Ken [1 ]
Nishihara, Makoto [1 ]
Yamamoto, Hiroshi [1 ]
Mizuno, Shinya [1 ]
Yamaki, Fumikazu [1 ]
Yamamoto, Takashi [1 ]
机构
[1] Sumitomo Elect Device Innovat Inc, Yamanashi Plant, 1000 Kamisukiawara, Showa, Yamanashi 4093883, Japan
来源
2014 ASIA-PACIFIC MICROWAVE CONFERENCE (APMC) | 2014年
关键词
Gallium nitride; HEMTs; power amplifiers; X-band; ALGAN/GAN-HEMT;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A high-output power and broadband GaN high electron mobility transistor (HEMT) has been developed for X-band applications. The higher voltage operation is suitable for the higher output power amplification with the wider frequency response. Our developed GaN HEMT, featured with the high breakdown voltage property, realizes the 65 V operation delivering the output power of 310 W and power gain of 10 dB over the frequency range of 8.5 to 10.0 GHz under pulsed condition. These results proved an advantage of high drain voltage operation of GaN HEMT for high power and broadband X-band power amplifiers.
引用
收藏
页码:585 / 587
页数:3
相关论文
共 11 条
  • [1] [Anonymous], 2008, P AS PAC MICR C DEC
  • [2] Kuwata E., 2008, IEICE TECHNICAL REPO
  • [3] Nishihara M, 2011, EUR MICROW INTEGRAT, P65
  • [4] Noto H, 2012, EUR MICROW INTEGRAT, P695
  • [5] Shigematsu H., 2009, IEEE MTT S INT MICR, P7
  • [6] Ku-Band AlGaN/GaN-HEMT with over 30% of PAE
    Takagi, Kazutaka
    Takatsuka, Shinji
    Kashiwabara, Yasushi
    Teramoto, Shinichiro
    Matsushita, Keiichi
    Sakurai, Hiroyuki
    Onodera, Ken
    Kawasaki, Hisao
    Takada, Yoshiharu
    Tsuda, Kunio
    [J]. 2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 457 - +
  • [7] Yamagata J., 2008, IEICE TECHNICAL REPO
  • [8] Yamaki F., 2011, Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International, P1
  • [9] Yamaki F, 2011, EUR MICROW INTEGRAT, P328
  • [10] Yamamoto T., 2007, P EUR MICR INT CIRC, P173