Electrochemical, structural, compositional and optical properties of Cuprous Selenide thin films

被引：9

作者：

Thanikaikarasan, S. ^{[1
]}

Dhanasekaran, D. ^{[2
]}

Sankaranarayanan, K. ^{[3
]}

机构：

[1] Saveetha Univ, Saveetha Sch Engn, Dept Sci & Humanities, Div Phys, Chennai 602105, Tamil Nadu, India

[2] Saveetha Univ, Saveetha Sch Engn, Dept Elect & Commun Engn, Chennai 602105, Tamil Nadu, India

[3] Alagappa Univ, Sch Phys, Karaikkudi 630004, Tamil Nadu, India

来源：

CHINESE JOURNAL OF PHYSICS | 2020年 / 63卷

关键词：

Band gap; Copper Selenide; Electrodeposition; Crystallite size; Dislocation density; X-ray diffraction; ELECTRICAL-PROPERTIES; CHEMICAL-DEPOSITION; COPPER; GROWTH; CUSE; TEMPERATURE;

D O I：

10.1016/j.cjph.2019.10.023

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

This work focussed the electrochemical growth, structural, compositional and optical properties of Cuprous Selenide thin films. An electrochemical route has been used to prepare Cuprous Selenide thin films on different non transparent and transparent conducing substrates. Cyclic voltammetry has been carried out to find out the range of potential of the deposited films. X-ray diffraction shown that the deposited films possess polycrystalline nature. Structural parameters such as crystallite size, strain, dislocation density and stacking fault probability has been determined by the method of Williamson Hall plot analysis. Scanning electron microscopy with Energy dispersive X-ray analysis shown that the deposited films exhibited smooth surface with well defined stoichiometry. Ultraviolet Visible spectroscopic measurements showed that the band gap value around 2.84 eV for the deposited films.

引用

页码：138 / 148

页数：11

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