Step-bunched Bi2Te3 and Bi2Se3 layers epitaxially grown on high-index InP substrates

被引：2

作者：

Takagaki, Y. ^{[1
]}

Papadogianni, A. ^{[1
]}

Jenichen, B. ^{[1
]}

Jahn, U. ^{[1
]}

Bierwagen, O. ^{[1
]}

机构：

[1] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

THIN SOLID FILMS | 2015年 / 580卷

关键词：

Topological insulator; Hot wall epitaxy; Step bunching; High-index substrates; THERMOELECTRIC-MATERIALS; BISMUTH TELLURIDE; THIN-FILMS; DEFECTS;

D O I：

10.1016/j.tsf.2015.03.027

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Bi2Te3 and Bi2Se3 layers are grown on InP with various substrate orientations by hot wall epitaxy. The layers develop step bunching on high-index substrates as a consequence of the alignment of the c axis to the InP[111] direction. The bunched Bi2Te3 steps are ragged due to significant reevaporation. Pronounced porosity is caused in Bi2Te3 layers on InP(114) as the c axis is aligned also to the [001] direction of InP as well as to the [111] direction. We compare the Seebeck coefficient in the step-bunched and (0001)-oriented Bi2Te3 layers, where the anisotropy of the thermoelectric property is shown to be small. In addition, we demonstrate for Bi2Se3 layers on InP(115) that a (0001)-oriented minority component is incorporated as submicrometer-size islands in the bunched steps as it is also lattice-matched to the substrates. (C) 2015 Elsevier B.V. All rights reserved.

引用

页码：89 / 93

页数：5

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