Structural Properties of Phase-Change InSbTe Thin Films Grown at a Low Temperature by Metalorganic Chemical Vapor Deposition

被引：6

作者：

Ahn, Jun-Ku ^{[1
]}

Park, Kyoung-Woo ^{[1
]}

Hur, Sung-Gi ^{[1
]}

Kim, Chung-Soo ^{[3
]}

Lee, Jeong-Yong ^{[3
]}

Yoon, Soon-Gil ^{[1
,2
]}

机构：

[1] Chungnam Natl Univ, Sch Nano Sci & Technol, Taejon 305764, South Korea

[2] Chungnam Natl Univ, Grad Analyt Sci & Technol GRAST, Taejon 305764, South Korea

[3] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Taejon 305701, South Korea

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2011年 / 11卷 / 01期

关键词：

InSbTe Chalcogenide Materials; MOCVD; PRAM; Trench; Multi Level Memory; OPTICAL-DATA STORAGE; ALLOY;

D O I：

10.1166/jnn.2011.3098

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The feasibility of new InSbTe (IST) chalcogenide materials at the deposition temperatures of 225 and 250 degrees C using metalorganic chemical vapor deposition (MOCVD) for phase-change random access memory (PRAM) applications was investigated. Samples grown at 225 degrees C consisted of the main InTe phase, including a small amount of Sb. On the other hand, samples grown at 250 degrees C included the crystalline phases of InSb and InSbTe. MOCVD-IST materials are powerful candidates for highly-integrated PRAM applications.

引用

页码：189 / 194

页数：6

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