Bandgap-Engineered in Indium-Gallium-Oxide Ultraviolet Phototransistors

被引：43

作者：

Chang, Ting-Hao ^{[1
]}

Chang, Shoou-Jinn ^{[1
]}

Chiu, C. J. ^{[1
]}

Wei, Chih-Yu ^{[1
]}

Juan, Yen-Ming ^{[1
]}

Weng, Wen-Yin ^{[1
]}

机构：

[1] Natl Cheng Kung Univ, Adv Optoelect Technol Ctr, Inst Microelect, Dept Elect Engn, Tainan 70101, Taiwan

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2015年 / 27卷 / 08期

关键词：

IGO; phototransistors; Ga2O3; FILM; TRANSPARENT;

D O I：

10.1109/LPT.2015.2400446

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electrical performance of amorphous indium gallium oxide (a-IGO) thin-film transistors applied as deep-ultraviolet (DUV) phototransistors is investigated. It was found that the bandgap of a-IGO can be engineered by altering its chemical composition. The performance of the phototransistors depended strongly on In2O3 content in the IGO film. When the indium content increases from 21% to 31%, the phototransistor cutoff red-shifted from 280 to 320 nm. The DUV-to-visible rejection ratio and photoresponsivity of the fabricated phototransistors were similar to 10(5) and 0.18 A/W.

引用

页码：915 / 918

页数：4

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