Beam profile measurement of volcano-structured double-gated Spindt-type filed emitter arrays

被引：0

作者：

Nagao, Masayoshi ^{[1
]}

Gotoh, Yasuhito ^{[2
]}

Neo, Yoichiro ^{[3
]}

Mimura, Hidenori ^{[3
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

[2] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

[3] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan

来源：

2015 28TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC) | 2015年

关键词：

double gate FEA; Spindt-type emitter; beam focusing; image sensor; EMISSION;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Volcano-structured double-gate Spindt type field emitter arrays were fabricated using double-layered photoresist as a lift-off layer for the image sensor application. The emitter material that we tested is Ni and Mo/Ni. Electron beam focusing characteristics were evaluated by scanning slit method.

引用

页码：190 / 191

页数：2

共 3 条

[1] Beam profile measurement of volcano-structured double-gate Spindt-type field emitter
Nagao, Masayoshi
Gotoh, Yasuhito
Neo, Yoichiro
Mimura, Hidenori
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2016, 34 (02):
[2] Process technology for volcano-structured double-gate Spindt-type field emitter arrays
Nagao, Masayoshi
Murakami, Katsuhisa
Gotoh, Yasuhito
Neo, Yoichiro
Mimura, Hidenori
2017 30TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2017, : 122 - 123
[3] Fabrication of Spindt-Type Double-Gated Field-Emitters using Photoresist Lift-Off Layer
Nagao, M.
Yoshizawa, S.
2014 27TH INTERNATIONAL VACUUM NANOELECTRONICS CONFERENCE (IVNC), 2014,

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