Temperature dependent carrier induced ferromagnetism in Zn(Fe)O and Zn(FeAl)O thin films

被引:9
作者
Chattopadhyay, S. [1 ]
Nath, T. K. [1 ,2 ]
Behan, A. J. [2 ]
Neal, J. R. [2 ]
Score, D. [2 ]
Feng, Q. [2 ]
Fox, A. M. [2 ]
Gehring, G. A. [2 ]
机构
[1] Indian Inst Technol, Dept Phys & Meteorol, Kharagpur 721302, W Bengal, India
[2] Univ Sheffield, Dept Phys & Astron, Sheffield S3 7RH, S Yorkshire, England
基金
英国工程与自然科学研究理事会;
关键词
Dilute magnetic semiconductor; Carrier induced ferromagnetism; Insulating type DMS; SPIN INJECTION;
D O I
10.1016/j.apsusc.2010.06.085
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Epitaxial films of ZnO doped with magnetic ion Fe and, in some cases, with 1% Al show clear evidence of room temperature ferromagnetic ordering but containing huge amount of paramagnetic moment in it. The total ferromagnetic and paramagnetic contributions have been extracted from the low temperature SQUID measurements. A clear correlation between the magnetization per transition metal ion and the ratio of the number of carriers and number of donors have been found in these films and established the theory of carrier induced ferromagnetism. The experimental data has been best explained through the modification of electronic structure of oxide semiconductors with impurity states. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码:381 / 387
页数:7
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