Pixel Drift Detector (PixDD) - SIRIO: an X-ray spectroscopic system with high energy resolution at room temperature

被引:9
作者
Sammartini, M. [1 ,2 ]
Gandola, M. [1 ,2 ]
Mele, F. [1 ,2 ]
Bertuccio, G. [1 ,2 ]
Ambrosino, F. [3 ]
Bellutti, P. [5 ]
Borghi, G. [5 ]
Campana, R. [6 ,7 ]
Caselle, M. [8 ]
Cirrincione, D. [9 ,10 ]
Evangelista, Y. [3 ,4 ]
Feroci, M. [3 ,4 ]
Ficorella, F. [5 ]
Fiorini, M. [11 ]
Fuschino, F. [6 ,7 ]
Grassi, M. [12 ]
Labanti, C. [6 ,7 ]
Malcovati, P. [12 ,13 ]
Picciotto, A. [5 ]
Rachevski, A. [10 ]
Rashevskaya, I [14 ]
Zampa, G. [10 ]
Zampa, N. [10 ]
Zorzi, N. [5 ]
Vacchi, A. [9 ,10 ]
机构
[1] Politecn Milan, Dept Elect Informat & Bioengn, Via Anzani 42, I-22100 Como, Italy
[2] Ist Nazl Fis Nucl, Sez Milano, Natl Inst Nucl Phys, Via Celoria 16, I-120133 Milan, Italy
[3] INAF, Natl Inst Astrophys, IAPS, Via Fosso del Cavaliere 100, I-00133 Rome, Italy
[4] Ist Nazl Fis Nucl, Sez Roma 2, Via Ric Sci 1, I-00133 Rome, Italy
[5] FBK, Via Sommar 18, I-38123 Trento, Italy
[6] INAF OAS Bologna, Via Gobetti 101, I-40129 Bologna, Italy
[7] Ist Nazl Fis Nucl, Sez Bologna, Viale Berti Pichat 6-2, I-40127 Bologna, Italy
[8] Karlsruhe Inst Technol, Hermann von Helmholtz Pl 1, D-76344 Eggenstein Leopoldshafen, Germany
[9] Univ Udine, Via Sci 206, I-33100 Udine, Italy
[10] Ist Nazl Fis Nucl, Sez Trieste, Padriciano 99, I-34127 Trieste, Italy
[11] INAF, IASF Milano, Via Bassini 15, I-120133 Milan, Italy
[12] Univ Pavia, Dept Elect Comp & Biomed Engn, Via Ferrata 5, I-27100 Pavia, Italy
[13] Ist Nazl Fis Nucl, Sez Pavia, Via Bassi 6, I-27100 Pavia, Italy
[14] Ist Nazl Fis Nucl, TIFPA, Via Sommar 14, I-38123 Trento, Italy
关键词
Silicon drift detectors; Charge sensitive preamplifiers; Low noise amplifiers; Semiconductor radiation detectors; X-ray spectroscopy; PERFORMANCE; CHAMBER; NOISE;
D O I
10.1016/j.nima.2019.163114
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An X-ray spectroscopic system composed of a novel Pixel Drift Detector (PixDD) and SIRIO charge sensitive preamplifier is presented. The PixDD prototype is a 4 x 4 matrix of 500 mu m x 500 mu m pixels, manufactured on a 450 mu m thick, 9 k Omega cm silicon wafer. The anode current of a pixel is 0.7 pA at +20 degrees C and decreases down to tens of fA for temperatures lower than 0 degrees C. The low current together with the low pixel capacitance (30 fF independent of the pixel area), make PixDD an extremely low noise detector. When PixDD is coupled to the ultra-low noise SIRIO CMOS preamplifier, intrinsic spectral line widths (pulser) of 51 eV FWHM (5.9 electrons r.m.s.) and 130 eV FWHM at 5.9 keV (Fe-55) are obtained at +20 degrees C. If the system is slightly cooled down to 0 degrees C, the FWHMs decrease down to 38.5 eV (4.5 electrons r.m.s) and 127 eV for the pulser and the 5.9 keV line respectively. The high energy resolution of PixDD joined with its intrinsic position sensitivity and the possibility to sustain high photon fluxes open new perspectives in X-ray spectroscopic imaging in the 0.1 keV-20 keV energy range.
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页数:6
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