Effect of hydrogen passivation on charge storage in silicon quantum dots embedded in silicon nitride film

被引：54

作者：

Cho, CH ^{[1
]}

Kim, BH

Kim, TW

Park, SJ

Park, NM

Sung, GY

机构：

[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea

[2] Elect & Telecommun Res Inst, Basic Res Lab, Taejon 305350, South Korea

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 14期

关键词：

D O I：

10.1063/1.1894595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen passivation on the charge storage characteristics of two types of silicon nitride films containing silicon quantum dots (Si QDs) grown by SiH4+N-2 and SiH4+NH3 plasma was investigated. The transmission electron microscope analysis and the capacitance-voltage measurement showed that the silicon nitride film grown by SiH4+NH3 plasma has a lower interface trap density and a higher density of Si QDs compared to that grown by SiH4+N-2 plasma. It was also found that the charge retention characteristics in the Si QDs were greatly enhanced in the samples grown by means of SiH4+NH3 plasma, due to the hydrogen passivation of the defects in the silicon nitride films by NH3 during the growth of the Si QDs. (C) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

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