ELECTRICAL PROPERTIES OF PENTACENE FILMS OBTAINED BY PULSED LASER DEPOSITION

被引：0
|
作者：
Wisz, G. [1 ]
Virt, I. [1 ]
Kuzma, M. [1 ]
Sagan, P. [1 ]
Gorbach, T. Ya. [2 ]
Smertenko, P. S. [2 ]
机构：
[1] Univ Rzeszow, Inst Phys, PL-35309 Rzeszow, Poland
[2] Natl Acad Sci Ukraine, Inst Semicond Phys, UA-03028 Kiev 28, Ukraine
来源：
REVIEWS ON ADVANCED MATERIALS SCIENCE | 2010年 / 23卷 / 02期
关键词：
POLYMER;
D O I：
暂无
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
ITO covered glass was used as a substrate for the laser epitaxy of pentacene (C22H14) films. A different orientation of the substrate with respect to the pentacene plasma plume was applied. Thin films of pentacene were deposited using a YAG:Nd3+ laser with a second harmonic (lambda = 532 nm). The electrical properties of the structures were analyzed on the base of the current-voltage characteristics. The current-voltage characteristics are explained in relation to the molecular structure properties of the pentacene films as well as the pentacene/contact, pentacene/substrate interface. The carrier transport mechanisms for different interfaces and structures are presented.
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页码：229 / 233
页数：5
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