Effect of Sn Doping on the Thermoelectric Properties of n-type Bi2(Te,Se)3 Alloys

被引：9

作者：

Lee, Jae-Uk ^{[1
,3
]}

Lee, Deuk-Hee ^{[1
]}

Kwon, Beomjin ^{[1
]}

Hyun, Dow-Bin ^{[1
]}

Nahm, Sahn ^{[3
]}

Baek, Seung-Hyub ^{[1
,2
]}

Kim, Jin-Sang ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Future Convergence Res Div, Seoul 136791, South Korea

[2] Korea Univ Sci & Technol, Dept Nanomat Sci & Technol, Taejon 305333, South Korea

[3] Korea Univ, Dept Mat Sci & Engn, Seoul 136713, South Korea

来源：

JOURNAL OF ELECTRONIC MATERIALS | 2015年 / 44卷 / 06期

关键词：

Bismuth telluride; thermoelectric; Sn doping; mechanical deformation; hot press; PERFORMANCE; TELLURIDE; CRYSTALS; HEAT;

D O I：

10.1007/s11664-014-3598-z

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In the present work, 0.01-0.05wt.% Sn-doped Bi-2(Te0.9Se0.1)(3) alloys were prepared by mechanical deformation followed by hot pressing, and their thermoelectric properties were studied. We observed that the Sn element is a very effective dopant as an acceptor to control the carrier concentration in the n-type Bi-2(Te0.9Se0.1)(3) alloys to optimize their thermoelectric property. The n-type carrier concentration can be controlled from 4.2 x 10(19)/cm(3) to 2.4 x 10(19)/cm(3) by 0.05wt.% Sn-doping. While the Seebeck coefficient and the electrical resistivity are both increased with doping, the power factor remains the same. Therefore, we found that the thermoelectric figure-of-merit becomes maximized at 0.75 when the thermal conductivity has a minimum value for the 0.03wt.% Sn-doped sample.

引用

页码：1926 / 1930

页数：5