Detection of explosive vapors using organic thin-film transistors

被引:8
作者
Bentes, E [1 ]
Gomes, HL [1 ]
Stallinga, P [1 ]
Moura, L [1 ]
机构
[1] Univ Algarve, Fac Sci & Technol, P-8000 Faro, Portugal
来源
PROCEEDINGS OF THE IEEE SENSORS 2004, VOLS 1-3 | 2004年
关键词
gas sensor; organic transistor;
D O I
10.1109/ICSENS.2004.1426281
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Field effect transistors (FETs) based on organic materials were investigated as sensors for detecting 2,4,6-trinitrotoluene (TNT) vapors. Several FET devices were fabricated using two types of semiconducting organic materials, solution processed polymers deposited by spin coating and, oligomers (or small molecules) deposited by vacuum sublimation. When vapors of nitroaromatic compounds bind to thin films of organic materials which form the transistor channel, the conductivity of the thin film increases and changes the transistor electrical characteristic. The use of the amplifying properties of the transistor represents a major advantage over conventional techniques based on simple changes of resistance in polymers frequently used in electronic noses.
引用
收藏
页码:766 / 769
页数:4
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